SI4931DY-T1-GE3
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270 руб.
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Описание
Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 6.7 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.7 |
Maximum Drain Source Resistance (mOhm) | 18@4.5V |
Maximum Drain Source Voltage (V) | 12 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Gate Threshold Voltage (V) | 1 |
Maximum IDSS (uA) | 1 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 8 |
Maximum Power Dissipation (mW) | 2000 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
Minimum Gate Threshold Voltage (V) | 0.4 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 2 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | TrenchFET |
Product Category | Power MOSFET |
Standard Package Name | SO |
Supplier Package | SOIC N |
Typical Fall Time (ns) | 155 |
Typical Gate Charge @ Vgs (nC) | 34.5@4.5V |
Typical Gate Plateau Voltage (V) | 1.5 |
Typical Gate to Drain Charge (nC) | 9.6 |
Typical Gate to Source Charge (nC) | 5.1 |
Typical Reverse Recovery Time (ns) | 128 |
Typical Rise Time (ns) | 46 |
Typical Turn-Off Delay Time (ns) | 230 |
Typical Turn-On Delay Time (ns) | 25 |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 155 ns |
Forward Transconductance - Min: | 26 S |
Id - Continuous Drain Current: | 8.9 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | SI4931DY-GE3 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 52 nC |
Rds On - Drain-Source Resistance: | 18 mOhms |
Rise Time: | 46 ns |
Series: | SI4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | TrenchFET |
Transistor Polarity: | P-Channel |
Transistor Type: | 2 P-Channel |
Typical Turn-Off Delay Time: | 230 ns |
Typical Turn-On Delay Time: | 25 ns |
Vds - Drain-Source Breakdown Voltage: | 12 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 400 mV |
Техническая документация
Datasheet
pdf, 605 КБ