IRF840PBF, Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB

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320 руб.

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Номенклатурный номер: 8001119338

Артикул: IRF840PBF

Описание Транзистор N-MOSFET, полевой, 500В, 5,1А, 125Вт, TO220AB

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	8
Maximum Drain Source Resistance (mOhm)	850@10V
Typical Gate Charge @ Vgs (nC)	63(Max)@10V
Typical Gate Charge @ 10V (nC)	63(Max)
Typical Input Capacitance @ Vds (pF)	1300@25V
Maximum Power Dissipation (mW)	125000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	23
Typical Turn-Off Delay Time (ns)	49
Typical Turn-On Delay Time (ns)	14
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Automotive	No
Pin Count	3
Supplier Package	TO-220AB
Standard Package Name	TO-220
Military	No
Mounting	Through Hole
Package Height	9.01(Max)
Package Length	10.51(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole
Current - Continuous Drain (Id) @ 25В°C	8A(Tc)
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Power Dissipation (Max)	125W(Tc)
Rds On (Max) @ Id, Vgs	850mOhm @ 4.8A, 10V
Series	-
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	1