BFU760F,115, Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R
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см. техническую документацию
см. техническую документацию
60 руб.
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Добавить в корзину 520 шт.
на сумму 31 200 руб.
Описание
BFU7xxF Microwave Transistors
NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.
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NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.
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Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.21.00.75 |
Type | NPN |
Material | SiGe |
Configuration | Single Dual Emitter |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage (V) | 10 |
Maximum Collector-Emitter Voltage (V) | 2.8 |
Maximum Collector-Emitter Voltage Range (V) | <20 |
Maximum Emitter Base Voltage (V) | 1 |
Maximum DC Collector Current (A) | 0.07 |
Maximum DC Collector Current Range (A) | 0.06 to 0.12 |
Maximum Collector Cut-Off Current (nA) | 100 |
Operational Bias Conditions | 2.5V/50mA |
Minimum DC Current Gain | 155@10mA@2V |
Minimum DC Current Gain Range | 120 to 200 |
Typical Input Capacitance (pF) | 1.045 |
Typical Output Capacitance (pF) | 0.175 |
Maximum Power Dissipation (mW) | 220 |
Maximum Power 1dB Compression (dBm) | 18.5(Typ) |
Typical Power Gain (dB) | 25.5 |
Maximum 3rd Order Intercept Point (dBm) | 33(Typ) |
Maximum Transition Frequency (MHz) | 45000(Typ) |
Maximum Noise Figure (dB) | 0.75(Typ) |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Automotive | No |
Standard Package Name | DFP |
Pin Count | 4 |
Supplier Package | DFP |
Military | No |
Mounting | Surface Mount |
Package Height | 0.75(Max) |
Package Length | 2.2(Max) |
Package Width | 1.35(Max) |
PCB changed | 3 |
Tab | Tab |
Brand: | NXP Semiconductors |
Collector- Emitter Voltage VCEO Max: | 2.8 V |
Continuous Collector Current: | 70 mA |
DC Collector/Base Gain hfe Min: | 155 |
Emitter- Base Voltage VEBO: | 1 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Manufacturer: | NXP |
Mounting Style: | SMD/SMT |
Operating Frequency: | 45 GHz |
Package / Case: | SOT-343 |
Part # Aliases: | 934064615115 |
Pd - Power Dissipation: | 220 mW |
Product Category: | RF Bipolar Transistors |
Product Type: | RF Bipolar Transistors |
Subcategory: | Transistors |
Technology: | SiGe |
Transistor Type: | Bipolar |
Type: | RF Silicon Germanium |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 111 КБ
Datasheet BFU760F,115
pdf, 117 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
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