50A02MH-TL-E, Trans GP BJT PNP 50V 0.5A 600mW 3-Pin MCPH T/R
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
110 руб.
Мин. кол-во для заказа 300 шт.
Добавить в корзину 300 шт.
на сумму 33 000 руб.
Описание
TRANSISTOR, PNP, -50V, -0.5A, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:690MHz; Power Dissipation Pd:600mW; DC Collector Current:-500mA; DC Current Gain hFE:200hFE
Технические параметры
Brand | ON Semiconductor |
Collector- Base Voltage VCBO | -50 V |
Collector- Emitter Voltage VCEO Max | -50 V |
Collector-Emitter Saturation Voltage | -0.06 V |
Configuration | Single |
Continuous Collector Current | -500 mA |
DC Current Gain hFE Max | 500 |
Emitter- Base Voltage VEBO | -5 V |
Factory Pack Quantity | 3000 |
Gain Bandwidth Product fT | 690 MHz |
Manufacturer | ON Semiconductor |
Maximum DC Collector Current | -1 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SC-70-3 |
Packaging | Reel |
Pd - Power Dissipation | 600 mW |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | 50A02MH |
Transistor Polarity | PNP |
Unit Weight | 0.000988 oz |
Collector Current (Ic) | 500mA |
Collector Cut-Off Current (Icbo) | 100nA |
Collector-Emitter Breakdown Voltage (Vceo) | 50V |
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 120mV@10mA, 100mA |
DC Current Gain (hFE@Ic,Vce) | 200@10mA, 2V |
Power Dissipation (Pd) | 600mW |
Transistor Type | PNP |
Transition Frequency (fT) | 690MHz |
Brand: | onsemi |
Collector- Base Voltage VCBO: | 50 V |
Collector- Emitter Voltage VCEO Max: | 50 V |
Collector-Emitter Saturation Voltage: | 60 mV |
Configuration: | Single |
Continuous Collector Current: | -500 mA |
DC Current Gain hFE Max: | 500 |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 690 MHz |
Manufacturer: | onsemi |
Maximum DC Collector Current: | 500 mA |
Maximum Operating Temperature: | +150 C |
Mounting Style: | SMD/SMT |
Package / Case: | SC-70-3 |
Pd - Power Dissipation: | 600 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | PNP |
Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов