IRFR024PBF, Транзистор полевой N-канальный 60В 14А 42Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 60В 14А 42Вт
Технические параметры
| Корпус | DPAK/TO-252AA | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Gull-wing | |
| Maximum Continuous Drain Current (A) | 14 | |
| Maximum Diode Forward Voltage (V) | 1.5 | |
| Maximum Drain Source Resistance (mOhm) | 100 10V | |
| Maximum Drain Source Voltage (V) | 60 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Gate Threshold Voltage (V) | 4 | |
| Maximum IDSS (uA) | 25 | |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Positive Gate Source Voltage (V) | 20 | |
| Maximum Power Dissipation (mW) | 2500 | |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 | |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 | |
| Minimum Gate Threshold Voltage (V) | 2 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Operating Junction Temperature (°C) | -55 to 150 | |
| Part Status | Active | |
| PCB changed | 2 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | HEXFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-252 | |
| Supplier Package | DPAK | |
| Tab | Tab | |
| Typical Fall Time (ns) | 42 | |
| Typical Gate Charge @ 10V (nC) | 25(Max) | |
| Typical Gate Charge @ Vgs (nC) | 25(Max)10V | |
| Typical Gate Plateau Voltage (V) | 6.1 | |
| Typical Gate to Drain Charge (nC) | 11(Max) | |
| Typical Gate to Source Charge (nC) | 5.8(Max) | |
| Typical Input Capacitance @ Vds (pF) | 640 25V | |
| Typical Output Capacitance (pF) | 360 | |
| Typical Reverse Recovery Charge (nC) | 290 | |
| Typical Reverse Recovery Time (ns) | 88 | |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 79 25V | |
| Typical Rise Time (ns) | 58 | |
| Typical Turn-Off Delay Time (ns) | 25 | |
| Typical Turn-On Delay Time (ns) | 13 | |
| Maximum Continuous Drain Current - (A) | 14 | |
| Maximum Drain Source Resistance - (mOhm) | 100@10V | |
| Maximum Drain Source Voltage - (V) | 60 | |
| Maximum Gate Source Voltage - (V) | ??20 | |
| Maximum Gate Threshold Voltage - (V) | 4 | |
| Maximum Power Dissipation - (mW) | 2500 | |
| Military | No | |
| Operating Temperature - (??C) | -55~150 | |
| Packaging | Tape and Reel | |
| Typical Gate Charge @ 10V - (nC) | 25(Max) | |
| Typical Gate Charge @ Vgs - (nC) | 25(Max)@10V | |
| Typical Input Capacitance @ Vds - (pF) | 640@25V | |
| Typical Output Capacitance - (pF) | 360 | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 60 V | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK(TO-252) | |
| Вес, г | 0.32 |
Техническая документация
Datasheet
pdf, 1060 КБ
Документация
pdf, 1060 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
