PMV40UN2R
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см. техническую документацию
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18 руб.
Мин. кол-во для заказа 58 шт.
Добавить в корзину 58 шт.
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Альтернативные предложения4
Описание
Транзисторы и сборки MOSFET
Описание Транзистор N-MOSFET, полевой, 30В, 2,3А, 1Вт, SOT23
Технические параметры
| Корпус | sot23 | |
| кол-во в упаковке | 3000 | |
| Brand | Nexperia | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 3000 | |
| Fall Time | 12 ns | |
| Id - Continuous Drain Current | 4.4 A | |
| Manufacturer | Nexperia | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number Of Channels | 1 Channel | |
| Package / Case | SOT-23-3 | |
| Packaging | Cut Tape or Reel | |
| Pd - Power Dissipation | 1 W | |
| Product Category | MOSFET | |
| Product Type | MOSFET | |
| Qg - Gate Charge | 7 nC | |
| Rds On - Drain-Source Resistance | 44 mOhms | |
| Rise Time | 23 ns | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel Trench MOSFET | |
| Typical Turn-Off Delay Time | 34 ns | |
| Typical Turn-On Delay Time | 9 ns | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Vgs - Gate-Source Voltage | 4.5 V | |
| Vgs Th - Gate-Source Threshold Voltage | 400 mV | |
| Forward Transconductance - Min | 10.9 S | |
| RoHS | Details | |
| Unit Weight | 0.000282 oz | |
| Brand: | Nexperia | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 12 ns | |
| Id - Continuous Drain Current: | 4.4 A | |
| Manufacturer: | Nexperia | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | SOT-23-3 | |
| Part # Aliases: | 934068493215 | |
| Pd - Power Dissipation: | 1 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 7 nC | |
| Rds On - Drain-Source Resistance: | 44 mOhms | |
| Rise Time: | 23 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel Trench MOSFET | |
| Typical Turn-Off Delay Time: | 34 ns | |
| Typical Turn-On Delay Time: | 9 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV | |
| Channel Type | N | |
| Forward Diode Voltage | 1.2V | |
| Maximum Continuous Drain Current | 4.4 A | |
| Maximum Drain Source Resistance | 44 mΩ | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 5 W | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Series | PMV40UN2 | |
| Transistor Configuration | Single | |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V | |
| Width | 1.4mm | |
| Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 721 КБ
Datasheet PMV40UN2R
pdf, 721 КБ
Datasheet PMV40UN2R
pdf, 721 КБ
PMV40UN2
pdf, 722 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
