BSL215CH6327XTSA1
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170 руб.
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Описание
Электроэлемент
MOSFET, AEC-Q101, COMPLEMENT N&P, TSOP-6, Transistor Polarity:N and P Complement, Continuous Drain Current Id:1.5A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.108ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage , RoHS Compliant: Yes
Технические параметры
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | NIP |
| Configuration | Dual |
| Maximum Continuous Drain Current - (A) | 1.5 |
| Maximum Drain Source Resistance - (mOhm) | 140@4.5V@N ChannelI150@4.5V@P Channel |
| Maximum Drain Source Voltage - (V) | 20 |
| Maximum Gate Source Voltage - (V) | ??12 |
| Maximum Gate Threshold Voltage - (V) | 1.2@N ChannelI0.6@P Channel |
| Maximum Power Dissipation - (mW) | 500 |
| Military | No |
| Number of Elements per Chip | 2 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Standard Package Name | SOP |
| Supplier Package | TSOP |
| Typical Gate Charge @ Vgs - (nC) | 0.73@4.5V@N ChannelI3@5V@P Channel |
| Typical Input Capacitance @ Vds - (pF) | 110@10V@N ChannelI270@10V@P Channel |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 1.5 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Drain Source Resistance (mOhm) | 140@4.5V@N Channel|150@4.5V@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Gate Threshold Voltage (V) | 1.2@N Channel|0.6@P Channel |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 250 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Minimum Gate Threshold Voltage (V) | 0.7@N Channel|1.2@P Channel |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 6 |
| PPAP | Unknown |
| Process Technology | OptiMOS 2|OptiMOS-P 2 |
| Product Category | Small Signal |
| Typical Fall Time (ns) | 1.4@N Channel|14@P Channel |
| Typical Gate Charge @ Vgs (nC) | 0.73@4.5V@N Channel|3@5V@P Channel |
| Typical Input Capacitance @ Vds (pF) | 110@10V@N Channel|270@10V@P Channel |
| Typical Output Capacitance (pF) | 46@N Channel|110@P Channel |
| Typical Rise Time (ns) | 7.6@N Channel|9.7@P Channel |
| Typical Turn-Off Delay Time (ns) | 6.8@N Channel|14.5@P Channel |
| Typical Turn-On Delay Time (ns) | 4.1@N Channel|6.7@P Channel |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Resistance | 250 mΩ, 280 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Gate Threshold Voltage | 0.6 V, 1.2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 500 mW |
| Minimum Gate Threshold Voltage | 0.7 V, 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | TSOP-6 |
| Series | OptiMOS |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.73 nC @ 4.5 V, 3 nC @ 5 V |
| Width | 1.6mm |
| Вес, г | 0.127 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
