IPB020N10N5ATMA1
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Описание
Электроэлемент
MOSFET, N-CH, 100V, 120A, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0017ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 120A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600pF @ 50V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 375W(Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Series | OptiMOSв(ў |
| Supplier Device Package | DВІPAK(TO-263AB) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 270ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 176 A |
| Maximum Drain Source Resistance | 2.5 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 375 W |
| Minimum Gate Threshold Voltage | 2.2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO 263 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 168 nC @ 10 V |
| Width | 11.05mm |
| Вес, г | 2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
