SQ2361ES-T1_GE3
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Описание
Электроэлемент
MOSFET, AEC-Q101, P-CH, -60V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 2.8A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 30V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2W(Tc) |
| Rds On (Max) @ Id, Vgs | 177mOhm @ 2.4A, 10V |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 4 ns |
| Id - Continuous Drain Current: | 2.8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SQ2361ES-T1_BE3 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 9 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 177 mOhms |
| Rise Time: | 9 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Automotive Standard | AEC-Q101 |
| Channel Mode | Enhancement |
| Channel Type | P |
| Forward Diode Voltage | -1.2V |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Resistance | 320 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | -2.5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 2 W |
| Minimum Gate Threshold Voltage | -1.5V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V |
| Width | 1.4mm |
| Вес, г | 25 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 271 КБ
Datasheet SQ2361ES-T1_GE3
pdf, 274 КБ
Документация
pdf, 218 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
