BSR316PH6327XTSA1

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160 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 110 руб.

от 10 шт. — 87 руб.

от 26 шт. — 73.71 руб.

Добавить в корзину 2 шт. на сумму 320 руб.

Номенклатурный номер: 8001945985

Электроэлемент

Описание Транзистор P-МОП, полевой, -100В, -290мА, 500Вт, SC59, SIPMOS™

Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	26 ns
Forward Transconductance - Min	300 mS
Height	1.1 mm
Id - Continuous Drain Current	-360 mA
Length	3 mm
Manufacturer	Infineon
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SC-59-3
Packaging	Reel
Part # Aliases	BSR316P H6327 SP001101034
Pd - Power Dissipation	500 mW(1/2 W)
Product	MOSFETs
Product Category	MOSFET
Qg - Gate Charge	5.3 nC
Rds On - Drain-Source Resistance	2.2 Ohms
Rise Time	6 ns
RoHS	Details
Technology	Si
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Type	Small Signal Transistor
Typical Turn-Off Delay Time	71 ns
Typical Turn-On Delay Time	5 ns
Unit Weight	0.002469 oz
Vds - Drain-Source Breakdown Voltage	-100 V
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	-2 V
Width	1.6 mm
Automotive Standard	AEC-Q101
Channel Type	P
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	360 mA
Maximum Drain Source Resistance	2.2 Ω
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	20 V
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Minimum Gate Threshold Voltage	2V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SC-59
Pin Count	3
Series	BSR316P
Transistor Configuration	Single
Typical Gate Charge @ Vgs	5.3 nC @ 10 V