OPB829DZ
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см. техническую документацию
см. техническую документацию
8 шт. со склада г.Москва, срок 6-7 дней
2 080 руб.
от 2 шт. —
1 930 руб.
от 5 шт. —
1 830 руб.
от 8 шт. —
1 763.75 руб.
Добавить в корзину 1 шт.
на сумму 2 080 руб.
Альтернативные предложения3
Номенклатурный номер: 8001946720
Бренд: TT ELECTRONICS
Описание
Электроэлемент
OPTO SWITCH, SLOTTED; Sensor Output:Phototransistor; Sensor Mounting:Panel / Chassis; Gap Width:3.18mm; Aperture Width:-; Forward Current If:50mA; Reverse Voltage Vr:2V; Forward Voltage:1.7V; Product Range:OPB829Z Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):0.6V; External Depth:6.35mm; External Length / Height:10.03mm; External Width:24.64mm; Forward Voltage VF Max:1.7V; Gap Width:3.18mm; Input Current:20mA; Material:Plastic - Opaque; No. of Channels:1Channels; On Current Ic:1800ВµA; Operating Temperature Max:80В°C; Operating Temperature Min:-40В°C; Operating Temperature Range:-40В°C to +80В°C; Optocoupler Output Type:Phototransistor; Output Voltage:30V; Peak Wavelength:890nm; Reverse Leakage Current Max:100ВµA; Voltage BVceo Min:30V; Voltage BVeco Min:5V
Технические параметры
| Automotive | No |
| Maximum Collector Current - (mA) | 30 |
| Maximum Collector-Emitter Voltage - (V) | 30 |
| Maximum Forward Current - (mA) | 50 |
| Maximum Power Dissipation - (mW) | 100 |
| Maximum Reverse Voltage - (V) | 2 |
| Military | No |
| Operating Temperature - (??C) | -40~80 |
| Output Device | Phototransistor |
| Peak Wavelength - (nm) | 890 |
| Pin Count | 4 |
| Slit Width - (mm) | 0.254 |
| Current - Collector (Ic) (Max) | 30mA |
| Current - DC Forward (If) (Max) | 50mA |
| ECCN | EAR99 |
| HTSUS | 8541.40.8000 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40В°C ~ 80В°C |
| Output Configuration | Phototransistor |
| Package | Bulk |
| Package / Case | Module, Pre-Wired |
| REACH Status | REACH Unaffected |
| RoHS Status | RoHS Compliant |
| Sensing Distance | 0.125"" (3.18mm) |
| Sensing Method | Through-Beam |
| Type | Unamplified |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Aperture Width | 0.25 mm |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Factory Pack Quantity | 400 |
| If - Forward Current | 20 mA |
| Maximum Operating Temperature | +80 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Wire Leads |
| Number of Channels | 1 Channel |
| Output Type | Phototransistor |
| Packaging | Bulk |
| Pd - Power Dissipation | 100 mW |
| Slot Width | 3.18 mm |
| Vr - Reverse Voltage | 2 V |
| Wavelength | 890 nm |
Техническая документация
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