IRFB4410
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Описание
Электроэлемент
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Power Dissip
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 88 |
| Maximum Drain Source Resistance - (mOhm) | 10@10V |
| Maximum Drain Source Voltage - (V) | 100 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 200000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tube |
| Pin Count | 3 |
| Process Technology | Single |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Typical Gate Charge @ 10V - (nC) | 120 |
| Typical Gate Charge @ Vgs - (nC) | 120@10V |
| Typical Input Capacitance @ Vds - (pF) | 5150@50V |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 88 |
| Maximum Drain Source Resistance (MOhm) | 10 10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 200000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Tab | Tab |
| Typical Fall Time (ns) | 50 |
| Typical Gate Charge @ 10V (nC) | 120 |
| Typical Gate Charge @ Vgs (nC) | 120 10V |
| Typical Input Capacitance @ Vds (pF) | 5150 50V |
| Typical Rise Time (ns) | 80 |
| Typical Turn-Off Delay Time (ns) | 55 |
| Typical Turn-On Delay Time (ns) | 24 |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 96 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 250 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 120 nC |
| Rds On - Drain-Source Resistance: | 8 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Вес, г | 2.863 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
