VBPW34SR
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см. техническую документацию
см. техническую документацию
170 руб.
Мин. кол-во для заказа 2 шт.
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120 руб.
от 10 шт. —
91 руб.
от 100 шт. —
72.38 руб.
Добавить в корзину 2 шт.
на сумму 340 руб.
Описание
Электроэлемент
PHOTOPIN DIODE RG; No. of Pins:2Pins; Diode Case Style:SMD; Wavelength of Peak Sensitivity:940nm; Angle of Half Sensitivity В±:65В°; Dark Current:2000pA; Operating Temperature Min:-40В°C; Operating Temperature Max:100В°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Breakdown Voltage Vbr:60V; Forward Voltage VF Max:1.3V; Operating Temperature Range:-40В°C to +100В°C; Reverse Voltage Vr Max:60V; Wavelength Typ:940nm
Технические параметры
| Brand | Vishay Semiconductors |
| Dark Current | 2 nA |
| Factory Pack Quantity | 1000 |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 65 deg |
| Height | 1.2 mm |
| If - Forward Current | 50 mA |
| Length | 6.4 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Reel |
| Pd - Power Dissipation | 215 mW |
| Peak Wavelength | 940 nm |
| Photocurrent | 55 uA |
| Product | PIN Photodiodes |
| Product Category | Photodiodes |
| Rise Time | 100 ns |
| RoHS | Details |
| Type | Silicon PIN Photodiode |
| Vf - Forward Voltage | 1 V |
| Vr - Reverse Voltage | 60 V |
| Width | 3.9 mm |
| Amplifier Function | No |
| Diode Material | Si |
| Maximum Wavelength Detected | 1100nm |
| Minimum Wavelength Detected | 430nm |
| Mounting Type | Surface Mount |
| Number of Pins | 2 |
| Package Type | Reverse Gullwing |
| Spectrums Detected | Infrared, Visible Light |
| Wavelength of Peak Sensitivity | 940nm |
| Вес, г | 0.272 |
