SUM110P06-08L
1 060 руб.
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Описание
Электроэлемент
MOSFET, P-CH, -60V, -110A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-110A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 110A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 3.75W(Ta), 272W(Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| Series | TrenchFETВ® |
| Supplier Device Package | TO-263(D2Pak) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Вес, г | 1.788 |
Техническая документация
Datasheet SUM110P06-08L
pdf, 93 КБ
