SPA06N80C3
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см. техническую документацию
720 руб.
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610 руб.
от 5 шт. —
539 руб.
от 10 шт. —
502.50 руб.
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Описание
Электроэлемент
Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 500 |
| Fall Time | 8 ns |
| Height | 16.15 mm |
| Id - Continuous Drain Current | 6 A |
| Length | 10.65 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part # Aliases | SP000216302 SPA06N80C3XK SPA06N80C3XKSA1 |
| Pd - Power Dissipation | 39 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | CoolMOS C3 |
| Technology | Si |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 25 ns |
| Unit Weight | 0.211644 oz |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 4.85 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | SP000216302 SPA6N8C3XK SPA06N80C3XKSA1 |
| Pd - Power Dissipation: | 39 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Rds On - Drain-Source Resistance: | 780 mOhms |
| Rise Time: | 15 ns |
| Series: | CoolMOS C3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 72 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Case | PG-TO220-3-FP |
| Drain current | 6A |
| Drain-source voltage | 800V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | THT |
| On-state resistance | 0.9Ω |
| Polarisation | unipolar |
| Power dissipation | 39W |
| Type of transistor | N-MOSFET |
| Вес, г | 2.17 |
Техническая документация
Datasheet
pdf, 295 КБ
Datasheet SPA06N80C3XKSA1
pdf, 478 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
