BSC042NE7NS3GATMA1
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860 руб.
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740 руб.
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667 руб.
от 7 шт. —
633.75 руб.
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Описание
Электроэлемент
MOSFET, N-CH, 75V, 100A, PG-TDSON- 8, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:75V, On Resistance Rds(on):0.0037ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.1V , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 9 ns |
| Forward Transconductance - Min | 44 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC042NE7NS3 BSC042NE7NS3GXT G SP000657440 |
| Pd - Power Dissipation | 125 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 69 nC |
| Rds On - Drain-Source Resistance | 3.7 mOhms |
| Rise Time | 17 ns |
| RoHS | Details |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time | 14 ns |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |
| Width | 5.15 mm |
| Continuous Drain Current (Id) | 19A;100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.2mΩ@50A, 10V |
| Drain Source Voltage (Vdss) | 75V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.8V@91uA |
| Input Capacitance (Ciss@Vds) | 4.8nF@37.5V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.5W;125W |
| Total Gate Charge (Qg@Vgs) | 69nC@10V |
| Type | N Channel |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 9 ns |
| Forward Transconductance - Min: | 44 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TDSON-8 |
| Part # Aliases: | BSC042NE7NS3 G SP000657440 |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 69 nC |
| Rds On - Drain-Source Resistance: | 3.7 mOhms |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 34 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Вес, г | 0.5 |
Техническая документация
Datasheet
pdf, 1828 КБ
Datasheet BSC042NE7NS3GATMA1
pdf, 590 КБ
Трёхмерное изображение изделия
zip, 125 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
