BSC120N03LSGATMA1
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см. техническую документацию
см. техническую документацию
200 руб.
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от 5 шт. —
140 руб.
от 10 шт. —
114 руб.
от 43 шт. —
96 руб.
Добавить в корзину 2 шт.
на сумму 400 руб.
Описание
Электроэлемент
MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Pow
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 2.2 ns |
| Forward Transconductance - Min | 25 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 39 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC120N03LS BSC120N03LSGXT G SP000302848 |
| Pd - Power Dissipation | 28 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 15 nC |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Rise Time | 2.2 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 2.7 ns |
| Unit Weight | 0.008536 oz |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 2.2 ns |
| Forward Transconductance - Min: | 25 S |
| Id - Continuous Drain Current: | 39 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC120N03LS G SP000302848 |
| Pd - Power Dissipation: | 28 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 2.2 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 2.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.19 |
Техническая документация
Datasheet BSC120N03LS G
pdf, 520 КБ
Datasheet BSC120N03LSGATMA1
pdf, 459 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
