IPP037N06L3GXKSA1
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см. техническую документацию
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Описание
Электроэлемент
MOSFET, N-CH, 60V, 90A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:90A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.003ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Dissipation, RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 90A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 167W(Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| Series | OptiMOSв(ў |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 93ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 90 |
| Maximum Drain Source Resistance (mOhm) | 3.7 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 167000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220 |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ Vgs (nC) | 59 4.5V |
| Typical Input Capacitance @ Vds (pF) | 10000 30V |
| Typical Rise Time (ns) | 78 |
| Typical Turn-Off Delay Time (ns) | 64 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 167 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-220 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 59 nC @ 4.5 V |
| Width | 15.95mm |
| Вес, г | 5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1004 КБ
Datasheet
pdf, 997 КБ
Datasheet IPP037N06L3GXKSA1
pdf, 993 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
