IPP60R190C6XKSA1

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Номенклатурный номер: 8002024774

Электроэлемент

Описание Транзистор N-МОП, полевой, 600В 20,2A 151Вт 0,19Ом TO220 Характеристики

Automotive	Yes
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	20.2
Maximum Drain Source Resistance - (mOhm)	190@10V
Maximum Drain Source Voltage - (V)	600
Maximum Gate Source Voltage - (V)	20
Maximum Power Dissipation - (mW)	151000
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tube
Pin Count	3
Process Technology	CoolMOS
Standard Package Name	TO-220
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	63
Typical Gate Charge @ Vgs - (nC)	63@10V
Typical Input Capacitance @ Vds - (pF)	1400@100V
Base Product Number	IPP60R190 ->
Current - Continuous Drain (Id) @ 25В°C	20.2A (Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 100V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	151W (Tc)
Rds On (Max) @ Id, Vgs	190mOhm @ 9.5A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	CoolMOSв„ў ->
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	3.5V @ 630ВµA
Вес, г	2

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