IRF640

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см. техническую документацию

310 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 250 руб.

от 10 шт. — 216 руб.

от 50 шт. — 192.50 руб.

Добавить в корзину 2 шт. на сумму 620 руб.

Альтернативные предложения1

Номенклатурный номер: 8002025032

Электроэлемент

Описание Транзистор N-MOSFET, полевой, 200В, 11А, 125Вт, TO220AB Характеристики

RoHS Compliant	Yes
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	36 ns
Id - Continuous Drain Current:	18 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220AB-3
Packaging:	Tube
Part # Aliases:	IRF640PBF-BE3
Pd - Power Dissipation:	125 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7 nC
Rds On - Drain-Source Resistance:	180 mOhms
Rise Time:	45 ns
Series:	IRF
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	14 ns
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Resistance	180 mΩ
Maximum Drain Source Voltage	200 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	70 nC @ 10 V
Width	4.7mm
Вес, г	2.67