IRFP254

Изображения служат только для ознакомления,
см. техническую документацию

490 руб.

от 2 шт. — 390 руб.

от 5 шт. — 314 руб.

от 10 шт. — 287.28 руб.

Добавить в корзину 1 шт. на сумму 490 руб.

Номенклатурный номер: 8002025893

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 250В, 23А, Idm: 92А, 190Вт, TO247AC Характеристики

Current - Continuous Drain (Id) @ 25В°C	23A(Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-247-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	190W(Tc)
Rds On (Max) @ Id, Vgs	140 mOhm @ 14A, 10V
Series	-
Supplier Device Package	TO-247-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Base Product Number	IRFP254 ->
ECCN	EAR99
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Package	Tube
RoHS Status	ROHS3 Compliant
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	23 A
Maximum Drain Source Resistance	140 mΩ
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	190 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-247AC
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	140 nC @ 10 V
Width	5.31mm
Вес, г	6