IRFR1N60A
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 600В, 0,89А, 36Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2000 |
| Fall Time | 20 ns |
| Forward Transconductance - Min | 0.88 S |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 1.4 A |
| Length | 6.73 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252AA-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 36 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 14 nC |
| Rds On - Drain-Source Resistance | 7 Ohms |
| Rise Time | 14 ns |
| RoHS | Details |
| Series | IRF/SIHRx1N60A |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 18 ns |
| Typical Turn-On Delay Time | 9.8 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
| Width | 6.22 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 1.4 |
| Maximum Drain Source Resistance (MOhm) | 7000 10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 36000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 20 |
| Typical Gate Charge @ 10V (nC) | 14(Max) |
| Typical Gate Charge @ Vgs (nC) | 14(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 229 25V |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 9.8 |
| Вес, г | 0.6 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
