IRFR9014
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
Описание Транзистор P-МОП, полевой, 60 В 5.1 А 2.5 Вт D-PAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Current - Continuous Drain (Id) @ 25В°C | 5.1A(Tc) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Manufacturer | Vishay Siliconix |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Packaging | Cut Tape(CT) |
Part Status | Active |
Power Dissipation (Max) | 2.5W(Ta), 25W(Tc) |
Rds On (Max) @ Id, Vgs | 500mOhm @ 3.1A, 10V |
Series | - |
Supplier Device Package | D-Pak |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 5.1 |
Maximum Drain Source Resistance (mOhm) | 500 10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 100 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2500 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 31 |
Typical Gate Charge @ 10V (nC) | 12(Max) |
Typical Gate Charge @ Vgs (nC) | 12(Max)10V |
Typical Gate to Drain Charge (nC) | 5.1(Max) |
Typical Gate to Source Charge (nC) | 3.8(Max) |
Typical Input Capacitance @ Vds (pF) | 270 25V |
Typical Output Capacitance (pF) | 170 |
Typical Reverse Recovery Charge (nC) | 96 |
Typical Rise Time (ns) | 63 |
Typical Turn-Off Delay Time (ns) | 9.6 |
Typical Turn-On Delay Time (ns) | 11 |
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 31 ns |
Forward Transconductance - Min: | 1.4 S |
Id - Continuous Drain Current: | 5.1 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | TO-252-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 25 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 12 nC |
Rds On - Drain-Source Resistance: | 500 mOhms |
Rise Time: | 63 ns |
Series: | IRFR/U |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 9.6 ns |
Typical Turn-On Delay Time: | 11 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Maximum Continuous Drain Current | 5.1 A |
Maximum Drain Source Voltage | 60 V |
Package Type | DPAK(TO-252) |
Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 1158 КБ
Документация
pdf, 1153 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов