IKW40T120FKSA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 720 руб.
от 2 шт. —
2 530 руб.
от 5 шт. —
2 410 руб.
от 7 шт. —
2 327.50 руб.
Добавить в корзину 1 шт.
на сумму 2 720 руб.
Описание
Электроэлемент
Описание Транзистор: IGBT, 1,2кВ, 40А, 270Вт, PG-TO247-3 Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.3 V |
| Configuration | Single |
| Continuous Collector Current at 25 C | 75 A |
| Continuous Collector Current Ic Max | 40 A |
| Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 600 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part # Aliases | IKW40T120 IKW40T120XK SP000013940 |
| Pd - Power Dissipation | 270 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | XKW40T120 |
| Technology | Si |
| Base Product Number | IKW40T120 -> |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 105A |
| ECCN | EAR99 |
| Gate Charge | 203nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | NPT, Trench Field Stop |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 150В°C (TJ) |
| Package | Tube |
| Power - Max | 270W |
| REACH Status | REACH Unaffected |
| Reverse Recovery Time (trr) | 240ns |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 6.5mJ |
| Td (on/off) @ 25В°C | 48ns/480ns |
| Test Condition | 600V, 40A, 15Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Case | PG-TO247-3 |
| Collector current | 40A |
| Collector-emitter voltage | 1.2kV |
| Features of semiconductor devices | integrated anti-parallel diode |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Mounting | THT |
| Power dissipation | 270W |
| Pulsed collector current | 105A |
| Semiconductor structure | single transistor |
| Turn-off time | 700ns |
| Turn-on time | 92ns |
| Type of transistor | IGBT |
| Вес, г | 8.5 |
Техническая документация
Datasheet
pdf, 515 КБ
Datasheet IKW40T120FKSA1
pdf, 510 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
