IPB010N06NATMA1
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Описание
Электроэлемент
MOSFET, N CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):800Вµohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; P
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Maximum Continuous Drain Current - (A) | 180 |
| Maximum Drain Source Resistance - (mOhm) | 1@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 300000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Typical Gate Charge @ 10V - (nC) | 208 |
| Typical Gate Charge @ Vgs - (nC) | 208@10V |
| Typical Input Capacitance @ Vds - (pF) | 15000@30V |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 180 |
| Maximum Drain Source Resistance (mOhm) | 1@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.3 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 300000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 6 |
| PPAP | No |
| Product Category | Power MOSFET |
| Tab | Tab |
| Typical Fall Time (ns) | 23 |
| Typical Gate Charge @ 10V (nC) | 208 |
| Typical Gate Charge @ Vgs (nC) | 208@10V |
| Typical Input Capacitance @ Vds (pF) | 15000@30V |
| Typical Rise Time (ns) | 36 |
| Typical Turn-Off Delay Time (ns) | 74 |
| Typical Turn-On Delay Time (ns) | 37 |
| Forward Diode Voltage | 4.2V |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Resistance | 1.5 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 300 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | D2PAK-7 |
| Series | OptiMOS 5 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 208 nC @ 10 V |
| Width | 4.57mm |
| Вес, г | 1.99 |
Техническая документация
Datasheet
pdf, 1680 КБ
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Datasheet
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Datasheet
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Datasheet IPB010N06N
pdf, 1092 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
