FS150R12KT4BOSA1, Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray

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62 040 руб.

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Номенклатурный номер: 8002231428

Артикул: FS150R12KT4BOSA1

Diodes, Transistors and Thyristors\IGBT Transistors\IGBT Module

Модуль Trans IGBT N-CH 1200V 150A 750000mW 35-контактный лоток ECONO3-4

Automotive	No
Channel Type	N
Configuration	Hex
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Collector-Emitter Voltage (V)	1200
Maximum Continuous Collector Current (A)	150
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	750000
Minimum Operating Temperature (°C)	-40
Mounting	Screw
Packaging	Tray
Part Status	Active
PCB changed	35
Pin Count	35
PPAP	No
Supplier Package	ECONO3-4
Typical Collector Emitter Saturation Voltage (V)	1.75
Maximum Collector Emitter Voltage	1200 V
Maximum Continuous Collector Current	150 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	750 W
Minimum Operating Temperature	-40 °C
Mounting Type	Surface Mount
Package Type	EconoPACK 3
Transistor Configuration	3 Phase
Вес, г	363.3