2SCR375P5T100Q, Trans GP BJT NPN 120V 1.5A 2000mW 4-Pin(3+Tab) MPT T/R
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
5510 шт., срок 6-8 недель
140 руб.
Мин. кол-во для заказа 240 шт.
от 250 шт. —
130 руб.
от 500 шт. —
123 руб.
Добавить в корзину 240 шт.
на сумму 33 600 руб.
Альтернативные предложения2
Описание
2Sx Bipolar Junction Transistors
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
ROHM 2Sx Bipolar Junction Transistors (BJTs) are designed for use in industrial and consumer applications. These BJTs are available in both PNP and NPN polarities. The 2Sx BJT devices are housed in a variety of packages and are designed for medium power surface mount applications. ROHM 2Sx BJTs feature a wide storage temperature (T stg ) range of -55°C to +150°C and a junction temperature (T J ) of +150°C. Typical applications include general purpose small signal amplifiers, power supplies, high-speed switching, and low-frequency amplifiers.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Base Voltage VCBO: | 120 V |
| Collector- Emitter Voltage VCEO Max: | 120 V |
| Collector-Emitter Saturation Voltage: | 100 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1.5 A |
| DC Collector/Base Gain hFE Min: | 120 |
| DC Current Gain hFE Max: | 390 at 200 mA, 5 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 200 MHz |
| Manufacturer: | ROHM Semiconductor |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature: | +150 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOT-89-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | 2SxR |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Collector Emitter Voltage Max | 120В |
| Continuous Collector Current | 1.5А |
| DC Current Gain hFE Min | 120hFE |
| DC Усиление Тока hFE | 120hFE |
| Power Dissipation | 500мВт |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | NPN |
| Стиль Корпуса Транзистора | SOT-89 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Частота Перехода ft | 200МГц |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1002 КБ
Datasheet 2SCR375P5T100Q
pdf, 1421 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
