IKW50N60DTP, Транзистор IGBT, 600В, 61А, 159,6Вт, TO247-3

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Номенклатурный номер: 8002513231

Артикул: IKW50N60DTP

Semiconductors\Transistors\IGBT transistors and modules\IGBT transistors

Описание Транзистор IGBT, 600В, 61А, 159,6Вт, TO247-3 Характеристики

Case	TO247-3
Collector current	61A
Collector-emitter voltage	600V
Features of semiconductor devices	integrated anti-parallel diode
Gate charge	249nC
Gate-emitter voltage	±20V
Kind of package	tube
Manufacturer	INFINEON TECHNOLOGIES
Mounting	THT
Power dissipation	159.6W
Pulsed collector current	150A
Technology	TRENCHSTOP™
Turn-off time	233ns
Turn-on time	50ns
Type of transistor	IGBT
Collector Current (Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	600V
Diode Reverse Recovery Time (Trr)	115ns
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	1.8V@15V, 50A
Input Capacitance (Cies@Vce)	-
Operating Temperature	-40℃~+175℃@(Tj)
Power Dissipation (Pd)	319.2W
Pulsed Collector Current (Icm)	150A
Total Gate Charge (Qg@Ic,Vge)	249nC
Turn?off Delay Time (Td(off))	215ns
Turn?off Switching Loss (Eoff)	0.85mJ
Turn?on Delay Time (Td(on))	20ns
Turn?on Switching Loss (Eon)	1.53mJ
Type	FS(Field Stop)
Вес, г	6.21