STW13NK60Z, Транзистор N-МОП, полевой, +Z 600В 13A 150Вт 0,55Ом TO247

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113 шт., срок 7 недель

790 руб.

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Номенклатурный номер: 8002515222

Артикул: STW13NK60Z

Semiconductors\Transistors\Unipolar transistors\N channel transistors

Описание Транзистор N-МОП, полевой, +Z 600В 13A 150Вт 0,55Ом TO247

Case	TO247
Drain current	13A
Drain-source voltage	600V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
On-state resistance	0.55Ω
Polarisation	unipolar
Power dissipation	150W
Technology	SuperMesh™
Type of transistor	N-MOSFET
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	600
Fall Time	12 ns
Forward Transconductance - Min	11 S
Height	20.15 mm
Id - Continuous Drain Current	13 A
Length	15.75 mm
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	150 W
Product Category	MOSFET
Qg - Gate Charge	66 nC
Rds On - Drain-Source Resistance	550 mOhms
Rise Time	14 ns
RoHS	Details
Series	N-channel MDmesh
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	61 ns
Typical Turn-On Delay Time	22 ns
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Voltage	30 V
Width	5.15 mm
Вес, г	4.5