VP0808L-G, Транзистор P-МОП, -80В, -1,1А, 1Вт, TO92
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540 руб.
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450 руб.
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253.30 руб.
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Описание
P-канал 80V 280mA (Tj) 1W (Tc) сквозное отверстие TO-92-3
Технические параметры
| Base Product Number | VP0808 -> |
| Current - Continuous Drain (Id) @ 25В°C | 280mA (Tj) |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| PCN Assembly/Origin | http://www.microchip.com/mymicrochip/NotificationD |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| Power Dissipation (Max) | 1W (Tc) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.28 |
| Maximum Drain Source Resistance (mOhm) | 5000@10V |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Bag |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| Typical Fall Time (ns) | 30(Max) |
| Typical Input Capacitance @ Vds (pF) | 150(Max)@25V |
| Typical Rise Time (ns) | 40(Max) |
| Typical Turn-Off Delay Time (ns) | 30(Max) |
| Typical Turn-On Delay Time (ns) | 15(Max) |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 30 ns |
| Forward Transconductance - Min: | 200 mS |
| Id - Continuous Drain Current: | 280 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Rise Time: | 40 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.22 |
