DN2540N5-G, Транзистор МОП n-канальный, 400В, 150мА, 15Вт, TO220
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540 руб.
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Описание
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Технические параметры
Channel Mode | Depletion |
Channel Type | N |
Maximum Continuous Drain Current | 500 mA |
Maximum Drain Source Resistance | 25 Ω |
Maximum Drain Source Voltage | 400 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 3.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 15 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 4.826mm |
Brand: | Microchip Technology |
Channel Mode: | Depletion |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 20 ns |
Id - Continuous Drain Current: | 500 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 15 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 25 Ohms |
Rise Time: | 15 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 400 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
Вес, г | 1.92 |