IXFT120N30X3HV, Транзистор N-MOSFET, X3-Class, 300В, 120А, 735Вт, TO268, 145с
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4 440 руб.
от 30 шт. —
3 360 руб.
от 120 шт. —
2 890 руб.
Добавить в корзину 1 шт.
на сумму 4 440 руб.
Описание
HiPerFET™ Power MOSFETs
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 14 ns |
| Forward Transconductance - Min: | 60 S |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-268-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 735 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 170 nC |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Rise Time: | 30 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 130 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Вес, г | 3.95 |
Техническая документация
Datasheet
pdf, 256 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Похожие товары
![MRF1535NT1, Транзистор Field Effect, Lateral N-канал, 520 МГц, 35 Вт, 12.5 В [TO-272-6 WRAP]](https://static.chipdip.ru/lib/894/DOC005894901.jpg)
