FDD5690
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Описание
Описание Транзистор N-MOSFET, полевой, 60В, 30А, 50Вт, DPAK, PowerTrench® Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 30 |
| Maximum Drain Source Resistance (mOhm) | 27@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TMOS |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 23 |
| Typical Gate Charge @ Vgs (nC) | 23@10V |
| Typical Input Capacitance @ Vds (pF) | 1110@25V |
| Typical Rise Time (ns) | 9 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Typical Turn-On Delay Time (ns) | 10 |
Техническая документация
Datasheet
pdf, 289 КБ
