SSM3K37MFV, Транзистор: N-MOSFET, полевой, 20В, 0,25А, 0,15Вт, SOT723
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Описание
Описание Транзистор: N-MOSFET, полевой, 20В, 0,25А, 0,15Вт, SOT723 Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Continuous Drain Current (Id) @ 25В°C | 250mA |
Power Dissipation-Max (Ta=25В°C) | 150mW |
Rds On - Drain-Source Resistance | 2.2О© @ 100mA,4.5V |
Transistor Polarity | N Channel |
Vds - Drain-Source Breakdown Voltage | 20V |
Vgs - Gate-Source Voltage | 1V @ 1mA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Material | Si |
Maximum Continuous Drain Current (A) | 0.25 |
Maximum Drain Source Resistance (mOhm) | 2200@4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Voltage (V) | ±10 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 150 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Small Signal |
Supplier Package | VESM |
Typical Input Capacitance @ Vds (pF) | 12@10V |
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 8000 |
Id - Continuous Drain Current: | 250 mA |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-723-3 |
Pd - Power Dissipation: | 150 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Rds On - Drain-Source Resistance: | 2.2 Ohms |
Series: | SSM3K36 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSIII |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 36 ns |
Typical Turn-On Delay Time: | 18 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -10 V, +10 V |
Vgs th - Gate-Source Threshold Voltage: | 350 mV |
Maximum Continuous Drain Current | 250 mA |
Maximum Drain Source Resistance | 5.6 Ω |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | ±10 V |
Maximum Gate Threshold Voltage | 1V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 150 mW |
Minimum Gate Threshold Voltage | 0.35V |
Mounting Type | Surface Mount |
Package Type | SOT-723 |
Transistor Configuration | Single |
Width | 1.2mm |
Current - Continuous Drain (Id) @ 25В°C | 250mA(Ta) |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 10V |
Manufacturer | Toshiba Semiconductor and Storage |
Operating Temperature | 150В°C(TJ) |
Package / Case | SOT-723 |
Power Dissipation (Max) | 150mW(Ta) |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 100mA, 4.5V |
Series | U-MOSIII |
Supplier Device Package | VESM |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±10V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
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Datasheet
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Datasheet SSM3K37MFV,L3F
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Дополнительная информация
Калькуляторы группы «Транзисторы полевые с управляющим PN-переходом (JFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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