BCX6825TA

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33 руб.
Мин. кол-во для заказа 11 шт.
от 24 шт.22 руб.
от 96 шт.17.79 руб.
Добавить в корзину 11 шт. на сумму 363 руб.
Номенклатурный номер: 8023115006
Бренд: DIODES INC.

Описание

Описание Транзистор: NPN, биполярный, 20В, 1А, 1Вт, SOT89 Характеристики
Категория Транзистор
Тип биполярный
Вид NPN

Технические параметры

Base Product Number BCX6825 ->
Current - Collector (Ic) (Max) 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA, 1V
ECCN EAR99
Frequency - Transition 100MHz
HTSUS 8541.29.0075
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -65В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case TO-243AA
Power - Max 1W
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-89-3
Transistor Type NPN
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 20V
Brand Diodes Incorporated
Collector- Base Voltage VCBO 25 V
Collector- Emitter Voltage VCEO Max 20 V
Collector-Emitter Saturation Voltage 0.5 V
Configuration Single
Continuous Collector Current 1 A
DC Collector/Base Gain Hfe Min 160
DC Current Gain HFE Max 160 at 500 mA, 1 V
Emitter- Base Voltage VEBO 5 V
Factory Pack Quantity 1000
Gain Bandwidth Product FT 100 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current 1 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -65 C
Mounting Style SMD/SMT
Packaging Cut Tape or Reel
Pd - Power Dissipation 1 W
Product Category Bipolar Transistors-BJT
Product Type BJTs-Bipolar Transistors
Series BCX68
Subcategory Transistors
Transistor Polarity NPN
Maximum Collector Base Voltage 25 V
Maximum Collector Emitter Voltage 20 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 100 MHz
Maximum Power Dissipation 1 W
Minimum DC Current Gain 160
Number of Elements per Chip 1
Package Type SOT-89
Pin Count 3
Transistor Configuration Single
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 25 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Single
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 160
DC Current Gain hFE Max: 160 at 500 mA, 1 V
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 1000
Gain Bandwidth Product fT: 100 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -65 C
Mounting Style: SMD/SMT
Package / Case: SOT-89-3
Pd - Power Dissipation: 1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: BCX68
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1864 КБ
Datasheet BCX6825TA
pdf, 322 КБ