KDT00030TR, Фототранзистор, 5мм, p макс 880нм, 5В, 50°
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340 руб.
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Описание
Oптоэлектроника\Фотоэлементы\Фототранзисторы
Phototransistor Chip 630nm 2-Pin SMD T/R
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Emitter Voltage VCEO Max | 6 V |
| Collector-Emitter Saturation Voltage | 4.6 V |
| Dark Current | 0.1 uA |
| Factory Pack Quantity | 3000 |
| Height | 0.6 mm |
| Length | 1.7 mm |
| Light Current | 1100 uA |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | SMD/SMT |
| Package / Case | SMD |
| Packaging | Reel |
| Peak Wavelength | 630 nm |
| Product | Phototransistors |
| Product Category | Phototransistors |
| RoHS | Details |
| Series | KDT00030 |
| Type | Chip |
| Unit Weight | 0.00454 oz |
| Wavelength | 630 nm |
| Width | 0.8 mm |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Lens Shape Type | Flat |
| Maximum Collector-Emitter Saturation Voltage (V) | 4.6(Typ) |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Dark Current (nA) | 100 |
| Maximum Light Current (uA) | 1100(Typ) |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Channels per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 630 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Viewing Orientation | Top View |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 1100µA |
| Maximum Wavelength Detected | 630nm |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Spectral Range of Sensitivity | Maximum of 630 nm |
| Вес, г | 0.01 |
