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IXFT120N25X3HV, Транзистор N-MOSFET, 250В, 120А, 480Вт, TO268HV, 140нс

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3 840 руб.

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Номенклатурный номер: 8002645310

Артикул: IXFT120N25X3HV

Бренд: Ixys Corporation

Описание

Semiconductors\Transistors\Unipolar transistors\N channel transistors

N-канал 250V 120A (Tc) 520W (Tc) поверхностный монтаж TO-268HV

Технические параметры

Case	TO268HV
Drain current	120A
Drain-source voltage	250V
Features of semiconductor devices	ultra junction x-class
Gate charge	122nC
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	SMD
On-state resistance	12mΩ
Polarisation	unipolar
Power dissipation	480W
Reverse recovery time	140ns
Type of transistor	N-MOSFET
California Prop 65	Warning Information
Current - Continuous Drain (Id) @ 25В°C	120A (Tc)
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	7870pF @ 25V
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tube
Package / Case	TO-268-3, DВіPak (2 Leads + Tab), TO-268AA
Power Dissipation (Max)	520W (Tc)
Rds On (Max) @ Id, Vgs	12mOhm @ 60A, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Series	HiPerFETв„ў ->
Supplier Device Package	TO-268HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Brand:	IXYS
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	12 ns
Forward Transconductance - Min:	54 S
Id - Continuous Drain Current:	120 A
Manufacturer:	IXYS
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TO-268-3
Packaging:	Tube
Pd - Power Dissipation:	480 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	122 nC
Rds On - Drain-Source Resistance:	12 mOhms
Rise Time:	32 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	29 ns
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Вес, г	3.97