ZXTC2063E6TA, Транзистор NPN / PNP, биполярный, комплементарная пара, 40В
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см. техническую документацию
см. техническую документацию
310 руб.
от 5 шт. —
160 руб.
от 25 шт. —
129 руб.
от 100 шт. —
99.05 руб.
Добавить в корзину 1 шт.
на сумму 310 руб.
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 45 V, 150 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Dual |
| DC Current Gain HFE Max | 300 at 10 mA, 2 V |
| Emitter- Base Voltage VEBO | 7 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product FT | 190 MHz, 270 MHz |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 3.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-26-6 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 1700 mW |
| Product Category | Bipolar Transistors-BJT |
| Product Type | BJTs-Bipolar Transistors |
| Series | ZXTC2063 |
| Subcategory | Transistors |
| Transistor Polarity | NPN, PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 130 V, 45 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 135 mV, 175 mV |
| Configuration: | Dual |
| DC Current Gain hFE Max: | 300 at 10 mA, 2 V |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 190 MHz, 270 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 3.5 A, 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-26-6 |
| Pd - Power Dissipation: | 1.7 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZXTC2063 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN, PNP |
| Вес, г | 0.03 |
