2N7002KQ-7, Транзистор N-MOSFET, полевой, 60В, 0,31А, 0,37Вт, SOT23

Изображения служат только для ознакомления,
см. техническую документацию

19 руб.

Кратность заказа 20 шт.

от 100 шт. — 15 руб.

от 500 шт. — 12 руб.

Добавить в корзину 20 шт. на сумму 380 руб.

Номенклатурный номер: 8002665363

Артикул: 2N7002KQ-7

Бренд: DIODES INC.

Semiconductors\Transistors\Unipolar transistors\N channel transistors

Application	automotive industry
Case	SOT23
Drain current	0.31A
Drain-source voltage	60V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	DIODES INCORPORATED
Mounting	SMD
On-state resistance	3Ω
Polarisation	unipolar
Power dissipation	0.37W
Type of transistor	N-MOSFET
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	9.9 ns
Id - Continuous Drain Current:	380 mA
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT23-3
Pd - Power Dissipation:	540 mW
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	300 pC
Rds On - Drain-Source Resistance:	2 Ohms
Rise Time:	3.4 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	15.7 ns
Typical Turn-On Delay Time:	3.9 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Вес, г	0.02