BC846B-7-F
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см. техническую документацию
см. техническую документацию
3 руб.
Мин. кол-во для заказа 120 шт.
Добавить в корзину 120 шт.
на сумму 360 руб.
Технические параметры
Collector-Emitter Breakdown Voltage | 65V |
Maximum DC Collector Current | 100mA |
Pd - Power Dissipation | 300mW |
Transistor Type | NPN |
Maximum Collector Base Voltage | 80 V |
Maximum Collector Emitter Voltage | 65 V |
Maximum Emitter Base Voltage | 6 V |
Maximum Operating Frequency | 300 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 300 mW |
Minimum DC Current Gain | 200 |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 80 V |
Collector- Emitter Voltage VCEO Max: | 65 V |
Collector-Emitter Saturation Voltage: | 200 mV |
Configuration: | Single |
DC Collector/Base Gain hfe Min: | 200 |
Emitter- Base Voltage VEBO: | 6 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 300 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 100 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 310 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | BC846 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |