IXFR140N30P, Транзистор: N-MOSFET, полевой, 300В, 70А, 300Вт, ISOPLUS247™
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Описание
Описание Транзистор: N-MOSFET, полевой, 300В, 70А, 300Вт, ISOPLUS247™ Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 50 S |
Id - Continuous Drain Current: | 70 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 300 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 185 nC |
Rds On - Drain-Source Resistance: | 26 mOhms |
Rise Time: | 30 ns |
Series: | IXFR140N30 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | Polar Power MOSFET HiPerFET |
Typical Turn-Off Delay Time: | 100 ns |
Typical Turn-On Delay Time: | 30 ns |
Vds - Drain-Source Breakdown Voltage: | 300 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.3V |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Resistance | 26 mΩ |
Maximum Drain Source Voltage | 300 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 300 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | ISOPLUS247 |
Pin Count | 3 |
Series | Polar HiPerFET |
Typical Gate Charge @ Vgs | 185 nC @ 10 V |
Width | 5.21mm |
Вес, г | 4.87 |