SIR626DP-T1-RE3
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Описание
Электроэлемент
MOSFET, N-CH, 60V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 100A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 7.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 5130pF @ 30V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | PowerPAKВ® SO-8 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 104W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 10V |
| Series | TrenchFETВ® Gen IV |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250ВµA |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 78 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerPAK-SO-8 |
| Pd - Power Dissipation: | 104 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 102 nC |
| Rds On - Drain-Source Resistance: | 1.4 mOhms |
| Rise Time: | 25 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 404 КБ
Трёхмерное изображение изделия
pdf, 76 КБ
Трёхмерное изображение изделия
zip, 61 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
