UCC5320ECD
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Описание
Электроэлемент
MOSFET/IGBT DRIVER, HIGH/LOW SIDE, NSOIC; Driver Configuration:High Side and Low Side; Peak Output Current:4.3A; Supply Voltage Min:3V; Supply Voltage Max:15V; Driver Case Style:NSOIC; No. of Pins:8Pins; Input Delay:60ns
Технические параметры
| Brand | Texas Instruments |
| Configuration | Non-Inverting |
| Factory Pack Quantity | 300 |
| Fall Time | 10 ns |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Drivers | 1 Driver |
| Number of Outputs | 1 Output |
| Operating Supply Current | 1.67 mA |
| Operating Temperature Range | -55 C to+125 C |
| Output Current | 4.3 A |
| Output Voltage | 13.2 V to 33 V |
| Package / Case | SOIC-8 |
| Packaging | Tube |
| Product | IGBT, MOSFET Gate Drivers |
| Product Category | Gate Drivers |
| Propagation Delay - Max | 75 ns |
| Rise Time | 12 ns |
| RoHS | Details |
| Series | UCC5320 |
| Shutdown | No Shutdown |
| Supply Voltage - Max | 15 V |
| Supply Voltage - Min | 3 V |
| Type | Isolated Single Channel Gate Driver |
| Brand: | Texas Instruments |
| Configuration: | Inverting, Non-Inverting |
| Factory Pack Quantity: Factory Pack Quantity: | 300 |
| Fall Time: | 10 ns |
| Logic Type: | CMOS |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 1 Driver |
| Number of Outputs: | 1 Output |
| Operating Supply Current: | 1.67 mA |
| Output Current: | 2.4 A |
| Output Voltage: | 13.2 V to 33 V |
| Package / Case: | SOIC-8 |
| Packaging: | Tube |
| Product Category: | Isolated Gate Drivers |
| Product Type: | Isolated Gate Drivers |
| Product: | Isolated Gate Drivers |
| Propagation Delay - Max: | 75 ns |
| Rise Time: | 12 ns |
| Series: | UCC5320 |
| Shutdown: | No Shutdown |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 15 V |
| Supply Voltage - Min: | 3 V |
| Technology: | Si |
| Вес, г | 0.177 |
Техническая документация
Datasheet
pdf, 2154 КБ
