DN2530N8-G
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Описание
Электроэлемент
3 SOT-89 T/RMOSFET, DEPLETION-MODE, 300V, 12 Ohm | Microchip Technology Inc. DN2530N8-G
Технические параметры
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 0.2 |
| Maximum Drain Source Resistance - (mOhm) | 12000@0V |
| Maximum Drain Source Voltage - (V) | 300 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 1600 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Supplier Package | SOT-89 |
| Typical Input Capacitance @ Vds - (pF) | 300(Max)@25V |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.2 |
| Maximum Drain Source Resistance (mOhm) | 12000@0V |
| Maximum Drain Source Voltage (V) | 300 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1600 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Power MOSFET |
| Tab | Tab |
| Typical Fall Time (ns) | 20(Max) |
| Typical Input Capacitance @ Vds (pF) | 300(Max)@25V |
| Typical Rise Time (ns) | 15(Max) |
| Typical Turn-Off Delay Time (ns) | 15(Max) |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 300 mS |
| Id - Continuous Drain Current: | 200 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-89-3 |
| Pd - Power Dissipation: | 1.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 12 Ohms |
| Rise Time: | 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 0.0528 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
