DN3765K4-G
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Описание
Электроэлемент
MOSFET, N CH, 650V, 0.3A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:650V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Power Dissipation Pd:2.5W; Transistor Case Style:TO-252AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Automotive | No |
| Channel Mode | Depletion |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 0.3 |
| Maximum Drain Source Resistance - (mOhm) | 8000@0V |
| Maximum Drain Source Voltage - (V) | 650 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | DMOS |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Typical Input Capacitance @ Vds - (pF) | 825(Max)@25V |
| Brand: | Microchip Technology |
| Channel Mode: | Depletion |
| Configuration: | Single |
| Factory Pack Quantity: | 2000 |
| Fall Time: | 100 ns |
| Id - Continuous Drain Current: | 300 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Rise Time: | 75 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 75 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 4 |
Техническая документация
Datasheet
pdf, 543 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
