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LND150N8-G

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480 руб.

от 2 шт. — 380 руб.

от 5 шт. — 310 руб.

от 10 шт. — 284.76 руб.

Добавить в корзину 1 шт. на сумму 480 руб.

Номенклатурный номер: 8002971986

Бренд: Microchip Technology

Описание

Электроэлемент

MOSFET, N-CH, 500V, 0.03A, SOT-89, Transistor Polarity:N Channel, Continuous Drain Current Id:30mA, Drain Source Voltage Vds:500V, On Resistance Rds(on):850ohm, Rds(on) Test Voltage Vgs:0V, Threshold Voltage Vgs:-, No. of Pins:3Pins , RoHS Compliant: Yes

Технические параметры

Automotive	No
Channel Mode	Depletion
Channel Type	N
Configuration	Single
Maximum Continuous Drain Current - (A)	0.03
Maximum Drain Source Resistance - (mOhm)	1000000@0V
Maximum Drain Source Voltage - (V)	500
Maximum Gate Source Voltage - (V)	??20
Maximum Power Dissipation - (mW)	1200
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	4
Supplier Package	SOT-89
Typical Input Capacitance @ Vds - (pF)	7.5@25V
Maximum Continuous Drain Current	30 mA
Maximum Drain Source Resistance	1 kΩ
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.6 W
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	TO-243AA
Transistor Configuration	Single
Transistor Material	Si
Width	2.6mm
ECCN (US)	EAR99
Lead Shape	Flat
Maximum Continuous Drain Current (A)	0.03
Maximum Diode Forward Voltage (V)	0.9
Maximum Drain Source Resistance (mOhm)	1000000@0V
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum IDSS (uA)	3
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	1600
Maximum Power Dissipation on PCB @ TC=25°C (W)	1.6
Maximum Pulsed Drain Current @ TC=25°C (A)	0.03
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	DMOS
Product Category	Power MOSFET
Standard Package Name	SOT
Tab	Tab
Typical Fall Time (ns)	1300
Typical Gate Plateau Voltage (V)	0.5
Typical Input Capacitance @ Vds (pF)	7.5@25V
Typical Output Capacitance (pF)	2
Typical Reverse Recovery Time (ns)	200
Typical Reverse Transfer Capacitance @ Vds (pF)	0.5@25V
Typical Rise Time (ns)	450
Typical Turn-Off Delay Time (ns)	100
Typical Turn-On Delay Time (ns)	90
Вес, г	0.06