TC8220K6-G
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Описание
Электроэлемент
Two Pair, N- And P-Channel Enhancement-Mode Mosfet 12 Vdfn 4X4X1.0Mm T/R Rohs Compliant: Yes |Microchip TC8220K6-G
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Quad |
| Factory Pack Quantity: Factory Pack Quantity: | 3300 |
| Fall Time: | 15 ns, 15 ns |
| Forward Transconductance - Min: | 400 mS, 400 mS |
| Id - Continuous Drain Current: | 2.3 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 4 Channel |
| Package / Case: | DFN-12 |
| Packaging: | Reel, Cut Tape |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 6 Ohms, 7 Ohms |
| Rise Time: | 15 ns, 15 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 2 N-Channel, 2 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns, 20 ns |
| Typical Turn-On Delay Time: | 10 ns, 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Quad |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Drain Source Resistance (mOhm) | 7000@10V@P Channel|6000@10V@N Channel |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 4 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 12 |
| Pin Count | 12 |
| PPAP | No |
| Standard Package Name | DFN |
| Supplier Package | DFN EP |
| Typical Fall Time (ns) | 15(Max) |
| Typical Input Capacitance @ Vds (pF) | 56@25V@N Channel|75@25V@P Channel |
| Typical Rise Time (ns) | 15(Max) |
| Typical Turn-Off Delay Time (ns) | 20(Max) |
| Typical Turn-On Delay Time (ns) | 10(Max) |
| Вес, г | 0.0414 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
