FM25V02A-DG, F-RAM NVRAM FRAM Memory Serial
![Фото 1/3 FM25V02A-DG, F-RAM NVRAM FRAM Memory Serial](https://static.chipdip.ru/lib/800/DOC021800694.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/954/DOC022954783.jpg)
![](https://static.chipdip.ru/lib/954/DOC022954790.jpg)
2 180 руб.
от 10 шт. —
1 910 руб.
от 25 шт. —
1 640 руб.
от 100 шт. —
1 418.48 руб.
Добавить в корзину 1 шт.
на сумму 2 180 руб.
Описание
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces.
Технические параметры
Data Bus Width | 8bit |
Interface Type | SPI |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Maximum Random Access Time | 16ns |
Memory Size | 256kbit |
Minimum Operating Supply Voltage | 2 V |
Minimum Operating Temperature | -40 °C |
Mounting Type | Surface Mount |
Number of Bits per Word | 8bit |
Number of Words | 32K |
Organisation | 32K x 8 bit |
Package Type | DFN |
Pin Count | 8 |
Width | 4mm |
Brand | Cypress Semiconductor |
Factory Pack Quantity | 162 |
Manufacturer | Cypress Semiconductor |
Moisture Sensitive | Yes |
Mounting Style | SMD/SMT |
Operating Supply Voltage | 3.3 V |
Operating Temperature Range | -40 C to+85 C |
Organization | 32 k x 8 |
Package / Case | DFN-8 |
Packaging | Tube |
Product Category | F-RAM |
RoHS | Details |
Series | FM24V02 |
Supply Voltage - Max | 3.6 V |
Supply Voltage - Min | 2 V |
Unit Weight | 0.001319 oz |
Техническая документация
Datasheet FM25V02A-DG
pdf, 1503 КБ
Datasheet FM25V02A-G
pdf, 1482 КБ