PDTC123ET
35 руб.
Мин. кол-во для заказа 5 шт.
от 10 шт. —
21 руб.
от 100 шт. —
7.60 руб.
от 1000 шт. —
6.40 руб.
Добавить в корзину 5 шт.
на сумму 175 руб.
Описание
Электроэлемент
BRT TRANSISTOR, NPN, 50V, 100MA, 2.2KOHM / 2.2KOHM, 3-SOT-23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:50V, Transition Frequency ft:-, Power Dissipation Pd:250mW, DC Collector Current:100mA, DC Current Gain hFE:30 , RoHS Compliant: Yes
Технические параметры
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Frequency - Transition | - |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 250mW |
| Resistor - Base (R1) (Ohms) | 2.2k |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | TO-236AB(SOT23) |
| Transistor Type | NPN-Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Вес, г | 0.03 |
Техническая документация
PDTC123E_SERIES
pdf, 415 КБ
