TC1550TG-G

Изображения служат только для ознакомления,
см. техническую документацию

3 240 руб.

от 2 шт. — 3 040 руб.

от 3 шт. — 2 930 руб.

Добавить в корзину 1 шт. на сумму 3 240 руб.

Номенклатурный номер: 8002979272

Электроэлемент

N & P-Channel Enhancement-Mode Dual Mosfet 8 Soic 3.90Mm(.150In) T/R Rohs Compliant: Yes |Microchip TC1550TG-G

Drain to Source Voltage (Vdss)	500V
FET Feature	Standard
FET Type	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	55pF @ 25V
Manufacturer	Microchip Technology
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-SOIC(0.154", 3.90mm Width)
Packaging	Cut Tape(CT)
Part Status	Active
Rds On (Max) @ Id, Vgs	60Ohm @ 50mA, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	4V @ 1mA
Brand:	Microchip Technology
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity:	3300
Fall Time:	15 ns, 10 ns
Id - Continuous Drain Current:	350 mA, 240 mA
Manufacturer:	Microchip
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	SOIC-8
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Rds On - Drain-Source Resistance:	60 Ohms, 125 Ohms
Rise Time:	15 ns, 10 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel, P-Channel
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	10 ns, 15 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	4 V, 4.5 V
Вес, г	0.085